The demand for transistor circuitry to perform within more
exacting specifications has created the need for a method to accurateIy predict transistor circuit performance. A method utilizing an
electronic digital computer for the analysis of direct-coupled transistor
amplifiers is explained in this paper.
The dc bias levels and the mid-band...
This dissertation describes a new radio-frequency power-amplifier circuit and mode of operation that exceeds the efficiency of the conventional class C amplifier in the low and medium h-f range. It will be found useful in applications where linearity between the input and output are not required, as in all applications...
The design of a preamplifier for use with a
piezoelectric transducer is generally approached from
the point of view that an extremely high input impedance
is required to obtain low frequency response.
However, piezoelectric transducers are essentially
charge generators and this fact may be utilized in designing
preamplifiers to be...
Conventional bi-polar transistors are inherently low input
impedance devices. Transistor amplifiers have been designed
which will present high input impedance, but the frequency response
is limited to low frequencies, hundreds of kilocycles.
This thesis investigates both field effect transistors and
positive feedback as applied to high input impedance wide band...
The extremely fast ionization process in semiconductors offers
a means of generating pulses that have sub -nanosecond rise times
and high peak powers. There are several important applications of
these pulses which require the duration of the generated pulse to be
This thesis investigates three methods of producing variable...
The properties of linear active coupled lines consisting of
electrically long GaAs MESFET structures are investigated for possible
applications as traveling-wave broad-band amplifiers. In addition,
the nonlinear coupled Schottky lines are studied for applications as
voltage tunable circuit elements.
The analysis of the general active asymmetric coupled transmission
Reliability of sub-micron analog circuits is directly related to impact ionization and
the subsequent changes in threshold voltage and drain current of n-MOSFET devices.
This thesis presents theory of the hot-electron effects on the device characteristics and
circuit performance, explores several approaches to improve performance at both the