This thesis considers the worst-case design of transistor
circuits for the realization of Majority Logic.
First the meaning of Majority Logic is discussed. The requirement
of an odd number of inputs for the realization of Majority
Logic is justified. The usefulness of Majority Logic in synthesizing
a Boolean expression is...
The junction-field effect transistor has been improved technically,
so it is appropriate in analog switching applications. In this
paper, use of a junction FET as an analog switch is described.
Feedthrough of current from the gate control voltage causes a
noise at the output during the switching transient. Peak noise...
The influence of surface fields on the breakdown voltage
is studied experimentally for p⁺-n silicon diodes with
a junction depth of 0.5μ in order to improve the curvature-
limited breakdown of the diffused, shallow-collector
junction of a microwave transistor.
Devices with a gap in the gate metal electrode are
also...
The exponential characteristic of the base-emitter
Junction in bipolar transistors was used to make an
accurate and fairly temperature independent multiplier.
Using hybrid-pi transistor models and ECAP, a
bandwidth of 350 MHz was predicted. Linearity is
limited by emitter degeneration in the input differential
stage rather than by the small...
For many applications it is desirable to be able to experimentally determine the impulse response of a linear system while it is in operation. Use of correlation techniques allows this to be done
without noticeably disturbing the quiescent output value of the system.
An impulse response measurement apparatus is designed...
This paper is a study of the design of an integrated MOS addressing
circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase
dynamic SR and discussed briefly. The resulting circuit shows
several advantages to improve the essential conditions of integrated
circuit...
This paper is concerned with the design of a 21-bit
metal-oxide-semiconductor field-effect transistor (MOSFET)
integrated circuit static shift register.
This circuit consists of three separate 1, 4, and
16-bit static shift registers constructed on a single
monolithic chip, each with independent input and output
terminals.
Type D flip-flops are used...
It has been verified by theoretical analysis, circuit simulation and test that two
switch transistors in parallel in a simple sample and hold circuit can be achieve high speed
with low error voltage due to charge injection. The wide transistor provides low RC time
constant when it is closed and...