Index Catalog // ScholarsArchive@OSU

Creator:: Park, Cheol-Hee
Abstract:: New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
Resource Type:: Dissertation
Full Text:: of Transparent p- and n-type Semiconductors and Luminescent Materials. Abstract approved: New

Creator:: Kykyneshi, Robert
Abstract:: Thin films of wide band-gap semiconductors are deposited by the pulsed laser deposition method. Optimal deposition parameters for the individual compounds are reported. A family of p-type BaCuQF (Q = S, Se, Te) ceramics with a layered crystalline structure is investigated for active and passive device applications. Epitaxial films of...
Resource Type:: Dissertation
Full Text:: transparent to visible light because of the low band gap. A wide, 3.1 eV or larger, band gap semiconductor

Creator:: Valencia, Melinda Marie
Abstract:: The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
Resource Type:: Masters Thesis
Full Text:: applications. Thin films of α-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and

Creator:: Grover, Manan S.
Abstract:: In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
Resource Type:: Masters Thesis

Creator:: Kykyneshi, Robert
Abstract:: Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂ and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm. Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The amount of...
Resource Type:: Masters Thesis
Full Text:: BaCu2$2 Transparent Semiconductors. Abstract approved: Bulk properties of CuSc1..MgO2, CuSci..MgO2

Creator:: Zakutayev, Andriy
Abstract:: BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 – 3.5 eV) and a high concentration of free holes (10¹⁸ – 10²⁰ cm⁻³) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level...
Resource Type:: Dissertation
Full Text:: require a p-type transparent semiconductor. P-type transparent semiconductors are also useful for

Creator:: Sundholm, Eric Steven
Abstract:: Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
Resource Type:: Masters Thesis
Full Text:: amorphous oxide semiconductor (AOS) TFTs. The use of AOS TFT technology for the realization of transparent

Creator:: Lin, Shijia
Abstract:: Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
Resource Type:: Masters Thesis
Full Text:: -doped TiO2 as a Transparent Conducting Oxide (TCO) and ALD of HfO2/Nb2O5 Bilayers as Insulating

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