A computer simulation program, which runs efficiently on
micro-computers, for the diffusion of point defects in the diamond
and zincblende structure was developed. The simulated point
defects comprise vacancies, host or impurity interstitials on any
of three types of interstitials sites, and impurities. Diffusion
via vacancy first and second neighbor...
The classic treatment of diffusion by Einstein and by Chandrasekhar assumed
conservative boundary conditions; mobile species were neither created nor destroyed
on the sample surface. It is normal to assume that vacancies and host interstitials are
created and annihilated on incoherent interfaces or free surfaces; i.e., these are
assumed to...
The self-interstitial defect is commonly regarded as important in regulating diffusion
in silicon. A review of the literature reveals that the scientific bases for invoking the
self-interstitial defect are weak, while an alternate defect, the vacancy cluster, has been
largely ignored. One argument which has been used to establish dominance...