Metal–insulator–metal diodes with Nb₂O₅ and Ta₂O₅ insulators deposited via atomic layer deposition are investigated. For both Nb₂O₅ and Ta₂O₅, the dominant conduction process is established as Schottky emission at small biases and Frenkel–Poole emission at large biases. Fowler–Nordheim tunneling is not found to play a role in determining current versus...
In an enhancement-mode, n-channel (p-channel) oxide thin-film transistor (TFT), current arises as a consequence of electron (hole)
transport within a narrow accumulation layer. The square-law model accurately describes enhancement-mode TFT behavior and
establishes the equations appropriate for carrier mobility extraction. In contrast, in a depletion-mode oxide TFT, carrier transport
can...
p-type conducting films of α- BaCu₂S₂ have been deposited onto glass and KBr substrates, yielding a conductivity of 17 S/cm and a Hall mobility of 3.5 cm²/Vs. For a 430-nm-thick film, the optical transparency approaches 90% in the visible portion of the spectrum at 650 nm, and a transparency of...
White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. ac voltages in excess of 200 V were applied to a metal-insulator-semiconductor (i.e., DLC)-insulator-metal device structure to observe EL. At an applied voltage of 235 V, the brightness and efficiency were 0.5 fl...
InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence...
Highly transparent ZnO-based thin-film transistors (TFTs) are fabricated with optical transmission (including substrate) of ~75% in the visible portion of the electromagnetic spectrum. Current–voltage measurements indicate n-channel, enhancement-mode TFT operation with excellent drain current saturation and a drain current on-to-off ratio of ~10⁷. Threshold voltages and channel mobilities of devices...
The internal charge versus phosphor field (Q-Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q-Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may...
Offset is observed in the charge–voltage (Q–V) or internal charge–phosphor field (Q–Fp) characteristics of certain alternating-current thin-film electroluminescent (ACTFEL) devices. This offset arises from a displacement along the voltage axis of a transient curve measured across a sense capacitor in the electrical characterization setup. A procedure for adjusting this offset...
The energy barrier heights between two recently reported Ta-based amorphous metals (TaWSi and TaNiSi), TaN, and atomic layer deposited Al2O3 and HfO2 insulators are measured in metal/insulator/metal (MIM) structures with Au top electrodes using internal photoemission (IPE) spectroscopy. For Al2O3, the Ta-based metal barrier heights, phi(Bn), increase with increasing metal...