Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
Resistive random access memory (RRAM) is a non-volatile memory technology based on resistive switching in a dielectric or semiconductor sandwiched between two different metals. Also known as memristors, these devices are potential candidates for a next-generation replacement for flash memory. In this thesis, bipolar resistive switching is reported for the...
Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal
displays. Currently, amorphous silicon is the dominant TFT technology for displays, but
higher performance TFTs will become necessary to enable ultra-definition resolution
high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were
fabricated by RF magnetron sputter...
The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
Interest in nanomaterials is motivated partly by their potential for sensor arrays to detect
different gases. Nanowires in particular are of interest because their high surface-to-volume
ratio promises the possibility of high sensitivity. However, because of their discrete
quasi-one-dimensional geometry, electrical integration of nanowires into photolithographically
defined devices and circuits...
ZnO nanowires (NWs) are good candidates for chemical sensing because of their high surface-to-volume ratio. In this work, ZnO nanobridge sensors were fabricated utilizing a novel method which uses carbonized photoresist (C-PR) as a nucleation layer. The use of C-PR allows simultaneous growth and integration of NWs to lithographically-defined features....
Lower production costs are a common goal of many manufacturers as part of their continuous improvement strategies. A large portion of production costs for manufacturers is the machining of metals to form components. Metal machining is accompanied by friction and heat which is dealt with using metalworking fluids such as...
Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
Since bulk p-CuO/n-ZnO heterocontacts were first proposed for gas detection, rapid development has taken place in improving the overall functionality of these structures. While bulk heterocontacts have been shown to exhibit desirable sensitivity and selectivity characteristics, these devices suffer from innate diffusion and ZnO/CuO connectivity drawbacks that limit their effective...