Photocurrent Quantum Yield in Suspended Carbon Nanotube p–n Junctions

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/2z10wr95p

Descriptions

Attribute Name	Values
Creator	Aspitarte, Lee McCulley, Daniel R. Minot, Ethan D.
Abstract	We study photocurrent generation in individual suspended carbon nanotube pn junctions using spectrally-resolved scanning photocurrent microscopy. Spatial maps of the photocurrent allow us to determine the length of the pn junction intrinsic region, as well as the role of the n-type Schottky barrier. We show that reverse-bias operation eliminates complications caused by the n-type Schottky barrier and increases the length of the intrinsic region. The absorption cross-section of the CNT is calculated using an empirically verified model, and the effect of substrate reflection is determined using FDTD simulations. We find the room temperature photocurrent quantum yield is approximately 30% when exciting the carbon nanotube at the S₄₄ and S₅₅ excitonic transitions. The quantum yield value is an order of magnitude larger than previous estimates.
Resource Type	Article
DOI	https://doi.org/10.1021/acs.nanolett.6b02148
Date Available	2016-09-08T20:24:52+00:00
Date Issued	2016-09-08
Citation	Aspitarte, Lee;McCulley, Daniel R.;Minot, Ethan D.; 2016. Photocurrent Quantum Yield in Suspended Carbon Nanotube p–n Junctions. Nano Letters ()
Academic Affiliation	Physics
Rights Statement	Copyright Not Evaluated
Language	English [eng]
Replaces	http://hdl.handle.net/1957/59780