Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison Public Deposited

http://ir.library.oregonstate.edu/concern/articles/3b591b66w

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  • Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison
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  • A comparison was made of Al₂O₃ films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500°C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited ALD films and capacitance–voltage measurements indicate a lower relative dielectric constant. On the basis of x-ray photoelectron spectroscopy, transmission electron microscopy, and energy dispersive x-ray spectroscopy, it is found that the 500°C anneal results in the formation of a ~6 nm thick interfacial SiO₂ layer at the Si interface. This SiO₂ interfacial layer significantly affects the electrical performance of PIC Al₂O₃ films deposited on Si.
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  • Smith, S. W., Wang, W., Keszler, D. A., & Conley Jr, J. F. (2014). Solution based prompt inorganic condensation and atomic layer deposition of Al₂O₃ films: A side-by-side comparison. Journal of Vacuum Science & Technology A, 32(4), 041501. doi:10.1116/1.4874806
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