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p-type conductivity in CuCr₁₋ₓMgₓO₂ films and powders Public Deposited

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  • CuCr₁₋ₓMgₓO₂, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO₂ is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm⁻¹ in CuCr₀.₉₅Mg₀.₀₅O₂, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm⁻¹. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.
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  • Nagarajan, R., Draeseke, A. D., Sleight, A. W., & Tate, J. (2001). p-type conductivity in CuCr₁₋ₓMgₓO₂ films and powders. Journal of Applied Physics, 89(12), 8022-8025.
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  • 89
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  • 12
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  • This work was supported by the National Science Foundation and by the Research Corporation.
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