Article

 

Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors Public Deposited

Downloadable Content

Download PDF
https://ir.library.oregonstate.edu/concern/articles/8s45qb778

To the best of our knowledge, one or more authors of this paper were federal employees when contributing to this work. This is the publisher’s final pdf. The published article is copyrighted by the Electrochemical Society and can be found at:  http://jss.ecsdl.org/.

Descriptions

Attribute NameValues
Creator
Abstract
  • Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias-stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface.
Resource Type
DOI
Date Available
Date Issued
Citation
  • Du, X., Flynn, B. T., Motley, J. R., Stickle, W. F., Bluhm, H., & Herman, G. S. (2014). Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors. ECS Journal of Solid State Science and Technology, 3(9), Q3045-Q3049. doi:10.1149/2.010409jss
Journal Title
Journal Volume
  • 3
Journal Issue/Number
  • 9
Keyword
Rights Statement
Funding Statement (additional comments about funding)
  • This work was funded in part by the Oregon Nanoscience and Microtechnologies Institute (ONAMI). X. Du acknowledges financial support from the Juvenile Diabetes Research Foundation (3-PDF-2014-113-A-N). G. S. Herman acknowledges financial support from the Leona M. and Harry B. Helmsley Charitable Trust (grant 2012PG_T1D034). Beamline 11.0.2 at the Advanced Light Source is supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences and Materials Sciences Division of the US Department of Energy at the Lawrence Berkeley National Laboratory under Contract No. DE-AC02-05CH11231.
Publisher
Peer Reviewed
Language
Replaces
Additional Information
  • description.provenance : Made available in DSpace on 2014-10-17T18:29:37Z (GMT). No. of bitstreams: 1 DuXiaosongChemBioEnvEngRoleSelf-Assembled.pdf: 799226 bytes, checksum: f853439f4ee02f0f1073c96bc265df6c (MD5) Previous issue date: 2014-07-30
  • description.provenance : Submitted by Erin Clark (erin.clark@oregonstate.edu) on 2014-10-17T18:29:21Z No. of bitstreams: 1 DuXiaosongChemBioEnvEngRoleSelf-Assembled.pdf: 799226 bytes, checksum: f853439f4ee02f0f1073c96bc265df6c (MD5)
  • description.provenance : Approved for entry into archive by Erin Clark(erin.clark@oregonstate.edu) on 2014-10-17T18:29:37Z (GMT) No. of bitstreams: 1 DuXiaosongChemBioEnvEngRoleSelf-Assembled.pdf: 799226 bytes, checksum: f853439f4ee02f0f1073c96bc265df6c (MD5)

Relationships

Parents:

This work has no parents.

Items