Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors Public Deposited

http://ir.library.oregonstate.edu/concern/articles/8s45qb778

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  • Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias-stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface.
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  • Du, X., Flynn, B. T., Motley, J. R., Stickle, W. F., Bluhm, H., & Herman, G. S. (2014). Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors. ECS Journal of Solid State Science and Technology, 3(9), Q3045-Q3049. doi:10.1149/2.010409jss
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  • description.provenance : Approved for entry into archive by Erin Clark(erin.clark@oregonstate.edu) on 2014-10-17T18:29:37Z (GMT) No. of bitstreams: 1 DuXiaosongChemBioEnvEngRoleSelf-Assembled.pdf: 799226 bytes, checksum: f853439f4ee02f0f1073c96bc265df6c (MD5)
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