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Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors Public Deposited

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https://ir.library.oregonstate.edu/concern/articles/8s45qb778

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Abstract
  • Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on voltage shifts compared to IGZO back channel surfaces with no SAMs. FPA was found to have a lower surface energy and lower packing density than HPA, as well as lower bias-stress turn-on voltage shifts. The improved stability of IGZO TFTs with SAMs can be primarily attributed to a reduction in molecular adsorption of contaminants on the IGZO back channel surface and minimal trapping states present with phosphonic acid binding to the IGZO surface.
  • Keywords: Layer deposition, Tin oxide
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  • Du, X., Flynn, B. T., Motley, J. R., Stickle, W. F., Bluhm, H., & Herman, G. S. (2014). Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors. ECS Journal of Solid State Science and Technology, 3(9), Q3045-Q3049. doi:10.1149/2.010409jss
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  • 3
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  • 9
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  • This work was funded in part by the Oregon Nanoscience andMicrotechnologies Institute (ONAMI). X. Du acknowledges financialsupport from the Juvenile Diabetes Research Foundation (3-PDF-2014-113-A-N). G. S. Herman acknowledges financial supportfrom the Leona M. and Harry B. Helmsley Charitable Trust (grant2012PG_T1D034). Beamline 11.0.2 at the Advanced Light Sourceis supported by the Director, Office of Science, Office of Basic EnergySciences, Division of Chemical Sciences, Geosciences, and Biosciencesand Materials Sciences Division of the US Department ofEnergy at the Lawrence Berkeley National Laboratory under ContractNo. DE-AC02-05CH11231.
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