Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O Public Deposited

http://ir.library.oregonstate.edu/concern/articles/b8515q34k

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  • Atomic layer deposition of bismuth oxide using Bi(OCMe2 iPr)3 and H2O
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  • Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited at 150°C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm³, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210°C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.
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  • Austin, D. Z., Allman, D., Price, D., Hose, S., Saly, M., & Conley Jr, J. F. (2014). Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O. Journal of Vacuum Science & Technology A, 32(1), 01A113. doi:10.1116/1.4840835
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