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Citeable URL: http://ir.library.oregonstate.edu/concern/articles/b8515q34k

This is the publisher’s final pdf. The article is copyrighted by the American Vacuum Society and published by the American Institute of Physics Publishing. It can be found at:  http://scitation.aip.org/content/avs/journal/jvsta.

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Attribute Name	Values
Alternative Title	Atomic layer deposition of bismuth oxide using Bi(OCMe2 iPr)3 and H2O
Creator	Allman, Derryl Conley, John F., Jr. Saly, Mark Price, David Austin, Dustin Z. Hose, Sallie
Abstract or Summary	Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O at deposition temperatures between 90 and 270°C on Si₃N₄, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi₂O₃ films deposited at 150°C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm³, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210°C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.
Resource Type	Article
DOI	10.1116/1.4840835
Date Available	2014-06-17T19:57:12+00:00
Date Issued	2013-12-09
Citation	Austin, D. Z., Allman, D., Price, D., Hose, S., Saly, M., & Conley Jr, J. F. (2014). Atomic layer deposition of bismuth oxide using Bi(OCMe₂ [superscript i]Pr)₃ and H₂O. Journal of Vacuum Science & Technology A, 32(1), 01A113. doi:10.1116/1.4840835
Series	Vol. 32 no. 1 Journal of Vacuum Science & Technology A
Rights Statement	Copyright Not Evaluated
Funding Statement (additional comments about funding)	The authors would like to thank ON Semiconductor for financial support.
Publisher	American Institute of Physics Publishing
Peer Reviewed	Yes
Language	English [eng]
Replaces	http://hdl.handle.net/1957/49111
Additional Information	description.provenance : Approved for entry into archive by Erin Clark(erin.clark@oregonstate.edu) on 2014-06-17T19:57:12Z (GMT) No. of bitstreams: 1 AustinDustinElectEngCompSciAtomicLayerDeposition.pdf: 1982110 bytes, checksum: 29375d4a9a95753ccc076c2d41b4ff20 (MD5) description.provenance : Submitted by Erin Clark (erin.clark@oregonstate.edu) on 2014-06-17T19:56:53Z No. of bitstreams: 1 AustinDustinElectEngCompSciAtomicLayerDeposition.pdf: 1982110 bytes, checksum: 29375d4a9a95753ccc076c2d41b4ff20 (MD5) description.provenance : Made available in DSpace on 2014-06-17T19:57:12Z (GMT). No. of bitstreams: 1 AustinDustinElectEngCompSciAtomicLayerDeposition.pdf: 1982110 bytes, checksum: 29375d4a9a95753ccc076c2d41b4ff20 (MD5) Previous issue date: 2013-12-09

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