High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/cc08hm066

Descriptions

Attribute Name	Values
Creator	Newhouse, Paul F. Park, C.-H. Keszler, Douglas A. Tate, J. Nyholm, P. S. Tate, Janet
Abstract	High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3mₑ. In₂₋ₓWₓO₃₊y films have high visible transmittance of ~80%.
Resource Type	Article
DOI	https://doi.org/10.1063/1.2048829
Date Available	2010-01-25T17:37:23+00:00
Date Issued	2005-09-09
Citation	Newhouse, P. F., park, C., Keszler, D. A., Tate, J., & Nyholm, P. S. (2005). High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition [Electronic version]. Applied Physics Letters, 87(11).
Journal Title	Applied Physics Letters
Journal Volume	87
Academic Affiliation	Physics
Déclaration de droits	Copyright Not Evaluated
Publisher	American Institute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14055