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Mechanical stability of ultrathin Ge/Si film on SiO2: The effect of Si/SiO2 interface

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Abstract
  • We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO₂, using imperfect interface elements between Si and SiO₂ to model Si/SiO₂ interfacial slippage. We demonstrate that the overall composite film is stable when only the tangential slippage is allowed, however, it becomes unstable when normal slippage is allowed: the coherently strained Ge island induces a large local bending of Si layer, and separates the Si layer from the underlying SiO₂ forming a void at the Si/SiO₂ interface.
  • Keywords: voids (solid), composite materials, slip, elemental semiconductors, island structure, bending, semiconductor thin films, interface structure, silicon compounds, germanium, silicon, finite element analysis, mechanical stability
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  • Huang, M., Nairn, J. A., Liu, F., & Lagally, M. G. (2005). Mechanical stability of ultrathin Ge∕Si film on SiO₂: The effect of Si∕SiO₂ interface. Journal of Applied Physics, 97(11), 116108-116112.
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  • 97
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  • 11
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  • This research was supported by DOE Grant No. DE-FG03-03ER46027.
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