Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

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  • SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m(0) perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to Sn(S) antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich. (C) 2012 American Institute of Physics. [doi:10.1063/1.3675880]
  • Keywords: Solar cell, Film
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  • Vidal, J., Lany, S., d'Avezac, M., Zunger, A., Zakutayev, A., Francis, J., & Tate, J. (2012). Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS. Applied Physics Letters, 100(3) doi: 10.1063/1.3675880
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  • 100
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  • 3
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  • The theoretical part of this work was funded by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, under Contract No. DE-AC36-08GO28308 to NREL. The experimental part of this work was supported by the National Science Foundation of USA under Grant No. DMR-0804916.
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