Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates Public Deposited

http://ir.library.oregonstate.edu/concern/articles/h128nk00p

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  • Atomic layer deposition of two dimensional MoS2 on 150 mm substrates
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  • Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane (A₁g) modes of MoS₂. The separation of the E¹₂g and A1g peaks is a function of the number of ALD cycles, shifting closer together with fewer layers. Xray photoelectron spectroscopy indicates that stoichiometry is improved by postdeposition annealing in a sulfur ambient. High resolution transmission electron microscopy confirms the atomic spacing of monolayer MoS₂ thin films.
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  • Valdivia, A., Tweet, D. J., & Conley Jr, J. F. (2016). Atomic layer deposition of two dimensional MoS2 on 150 mm substrates. Journal of Vacuum Science & Technology A, 34(2), 021515. doi:10.1116/1.4941245
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