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Atomic layer deposition of two dimensional MoS₂ on 150 mm substrates

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https://ir.library.oregonstate.edu/concern/articles/h128nk00p

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Abstract
  • Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS₂ uniformly across 150mm diameter SiO₂/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl5 and H₂S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E¹₂g) and out-of-plane (A₁g) modes of MoS₂. The separation of the E¹₂g and A1g peaks is a function of the number of ALD cycles, shifting closer together with fewer layers. Xray photoelectron spectroscopy indicates that stoichiometry is improved by postdeposition annealing in a sulfur ambient. High resolution transmission electron microscopy confirms the atomic spacing of monolayer MoS₂ thin films.
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  • Valdivia, A., Tweet, D. J., & Conley Jr, J. F. (2016). Atomic layer deposition of two dimensional MoS2 on 150 mm substrates. Journal of Vacuum Science & Technology A, 34(2), 021515. doi:10.1116/1.4941245
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  • 34
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  • 2
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  • This work was supported by Sharp Labs of America (SLA) with matching funds from the Oregon Nanoscience and Microtechnologies Institute (ONAMI) and Oregon BEST. XPS was conducted by Fallon Fumasi at the Center for Advanced Materials Characterization in Oregon (CAMCOR) at the University of Oregon. TEM was conducted with the assistance of Pete Eschbach at the OSU Electron Microscopy Facility which is supported by the National Science Foundation via the Major Research Instrumentation (MRI) Program under Grant No. 1040588.
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