Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation Public Deposited

http://ir.library.oregonstate.edu/concern/articles/kw52j9942

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  • The role of back channel surface chemistry on amorphous zinc tin oxide (ZTO) bottom gate thin film transistors (TFTs) has been characterized by positive bias-stress measurements and x-ray photoelectron spectroscopy. Positive bias-stress turn-on voltage shifts for ZTO-TFTs were significantly reduced by passivation of back channel surfaces with self-assembled monolayers of n-hexylphosphonic acid when compared to ZTO-TFTs with no passivation. These results indicate that adsorption of molecular species on the exposed back channel of ZTO-TFTs strongly influence observed turn-on voltage shifts, as opposed to charge injection into the dielectric or trapping due to oxygen vacancies.
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  • Rajachidambaram, M. S., Pandey, A., Vilayurganapathy, S., Nachimuthu, P., Thevuthasan, S., & Herman, G. S. (2013). Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation. Applied Physics Letters, 103(17), 171602. doi:10.1063/1.4826457
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  • description.provenance : Approved for entry into archive by Erin Clark(erin.clark@oregonstate.edu) on 2014-03-27T22:39:59Z (GMT) No. of bitstreams: 1 HermanGregoryChemicalBiologicalEnvironmentalEngineeringImprovedStability.pdf: 564148 bytes, checksum: 7e59b4d434b8923ef0699015787d21c8 (MD5)
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  • description.provenance : Submitted by Erin Clark (erin.clark@oregonstate.edu) on 2014-03-27T22:39:15Z No. of bitstreams: 1 HermanGregoryChemicalBiologicalEnvironmentalEngineeringImprovedStability.pdf: 564148 bytes, checksum: 7e59b4d434b8923ef0699015787d21c8 (MD5)

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