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Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing

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  • The authors present a facile, low-cost methodology to fabricate high-performance In-Ga-Zn-O (IGZO) bottom contact, bottom gate thin-film transistors (TFTs) by soft lithography. The IGZO channel and indium tin oxide (ITO) source and drain were patterned using microcontact printing of an octadecylphosphonic acid self-assembled monolayer (SAM). A polymer stamp was used for the pattern transfer of the SAMs, which were then used as a chemical protection layer during wet etching. Excellent pattern transfer was obtained with good resolution and sharp step profiles. X-ray photoelectron spectroscopy indicated that the microcontact printed SAMs can be effectively removed from the ITO source/drain surfaces, allowing a high-quality interface to the IGZO channel for good device performance. Scanning electron microscopy cross-sections of the devices indicate a smooth and defect-free transition regions between the source/drain and semiconductor regions. The fabricated TFTs have negligible gate-leakage currents, high average electron mobilities of 10.2 cm²/Vs, and excellent on-off ratios of 2.1 x 10⁸. These results may provide new methodologies for low-cost and large-area integration of IGZO-TFTs for a range of applications including flexible and transparent displays.
  • Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science and Technology B and may be found at: http://scitation.aip.org/content/avs/journal/jvstb
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  • Du, X., Frederick, R. T., Li, Y., Zhou, Z., Stickle, W. F., & Herman, G. S. (2015). Amorphous In-Ga-Zn-O thin-film transistors fabricated by microcontact printing. Journal of Vacuum Science & Technology B, 33(5), 052208. doi:10.1116/1.4929984
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  • 33
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  • 5
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  • X.D. acknowledges funding from the Juvenile Diabetes Research Foundation (3-PDF-2014-113-A-N). R.T.F. and G.S.H. acknowledge support from the Center for Sustainable Materials Chemistry, which is supported by the U.S. National Science Foundation under Grant CHE-1102637. Y.L. acknowledges the support of China Scholarship Council and the Science Foundation of Civil Aviation University of China (3122013k006).
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