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Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling

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https://ir.library.oregonstate.edu/concern/articles/rv042v81r

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  • Metal-insulator-insulator-metal tunnel diodes with dissimilar work function electrodes and nanolaminate Al₂O₃-Ta₂O₅ bilayer tunnel barriers deposited by atomic layer deposition are investigated. This combination of high and low electron affinity insulators, each with different dominant conduction mechanisms (tunneling and Frenkel-Poole emission), results in improved low voltage asymmetry and non-linearity of current versus voltage behavior. These improvements are due to defect enhanced direct tunneling in which electrons transport across the Ta₂O₅ via defect based conduction before tunneling directly through the Al₂O₃, effectively narrowing the tunnel barrier. Conduction through the device is dominated by tunneling, and operation is relatively insensitive to temperature.
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  • Alimardani, N., & Conley Jr, J. F. (2014). Enhancing metal-insulator-insulator-metal tunnel diodes via defect enhanced direct tunneling. Applied Physics Letters, 105(8), 082902. doi:10.1063/1.4893735
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  • 105
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  • 8
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  • This work was supported in part by grants from theNational Science Foundation through DMR-0805372 withmatching support from the Oregon Nanoscience andMicrotechnologies Institute (ONAMI).
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