Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films Public Deposited

http://ir.library.oregonstate.edu/concern/articles/s7526f055

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  • Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar⁺ ions. The change in the structure resulted in a reduction in medium range order (MRO) characterized using fluctuation electron microscopy. The pulsed laser crystallization kinetics of the as-deposited versus irradiated materials were investigated using the dynamic transmission electron microscope operated in the multi-frame movie mode. The propagation rate of the crystallization front for the irradiated material was lower; the changes were correlated to the MRO difference and formation of a thin liquid layer during crystallization.
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  • Li, T. T., Aji, L. B., Heo, T. W., Santala, M. K., Kucheyev, S. O., & Campbell, G. H. (2016). Effect of medium range order on pulsed laser crystallization of amorphous germanium thin films. Applied Physics Letters, 108(22), 221906. doi:10.1063/1.4953153
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  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2016-07-19T16:50:12Z (GMT) No. of bitstreams: 1 LiEffectofMediumRange.pdf: 1289238 bytes, checksum: b9a613d2328e08fdf774f301ab8d51b7 (MD5)
  • description.provenance : Submitted by Patricia Black (patricia.black@oregonstate.edu) on 2016-07-19T16:49:30Z No. of bitstreams: 1 LiEffectofMediumRange.pdf: 1289238 bytes, checksum: b9a613d2328e08fdf774f301ab8d51b7 (MD5)
  • description.provenance : Made available in DSpace on 2016-07-19T16:50:12Z (GMT). No. of bitstreams: 1 LiEffectofMediumRange.pdf: 1289238 bytes, checksum: b9a613d2328e08fdf774f301ab8d51b7 (MD5) Previous issue date: 2016-05-30

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