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Band alignment at the BaCuSeF/ZnTe interface Public Deposited

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  • In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the basis of similarities in chemical composition, BaCuSeF contact to chalcogenide photovoltaic absorber materials would be expected to have similar properties. By extension, BaCuChF (Ch=S,Se,Te) materials are suitable as p-layers in p-i-n double-heterojunction solar cells fabricated with CdTe, Cu(InGa)Se₂, and Cu₂ZnSnS₄ absorbers.
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  • Zakutayev, A., Tate, J., Platt, H. A. S,, Keszler, D. A., Barati, A., Klein, A., & Jaegermann, W. (2010). Band alignment at the BaCuSeF/ZnTe interface. Applied Physics Letters, 96(16). doi:10.1063/1.3405757
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  • 96
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  • 16
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  • This work was supported by the German Research Foundation (Deutsche Forschungsgemeinschaft ) through the Center of Excellence 595 (Sonderforschungsbereich 595) and the U.S. National Science Foundation under Grant No. DMR-0804916.
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  • description.provenance : Submitted by Deanne Bruner (deanne.bruner@oregonstate.edu) on 2013-10-28T23:51:57Z No. of bitstreams: 1 TateJanetPhysicsBandAlignmentBaCuSeF.pdf: 120573 bytes, checksum: c7853b90917af51f0f656e6c39e938a7 (MD5)
  • description.provenance : Made available in DSpace on 2013-10-28T23:56:08Z (GMT). No. of bitstreams: 1 TateJanetPhysicsBandAlignmentBaCuSeF.pdf: 120573 bytes, checksum: c7853b90917af51f0f656e6c39e938a7 (MD5) Previous issue date: 2010-04-19
  • description.provenance : Approved for entry into archive by Deanne Bruner(deanne.bruner@oregonstate.edu) on 2013-10-28T23:56:08Z (GMT) No. of bitstreams: 1 TateJanetPhysicsBandAlignmentBaCuSeF.pdf: 120573 bytes, checksum: c7853b90917af51f0f656e6c39e938a7 (MD5)

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