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Electrical characterization of transparent p–i–n heterojunction diodes Public Deposited

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https://ir.library.oregonstate.edu/concern/articles/tt44pn44w

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Abstract
  • Transparent p – i – n heterojunction diodes are fabricated using heavily doped, p-type CuYO₂ and semi-insulating i-ZnO thin films deposited onto a glass substrate coated with n-type indium tin oxide. Rectification is observed, with a ratio of forward-to-reverse current as high as 60 in the range −4–4 V. The forward-bias current–voltage characteristics are dominated by the flow of space-charge-limited current, which is ascribed to single-carrier injection into the i-ZnO layer. Capacitance measurements show strong frequency dispersion, which is attributed to i-ZnO traps. The diode structure has a total thickness of 0.75 μm and an optical transmission of ∼35%–65% in the visible region.
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  • Hoffman, R. L., Wager, J. F., Jayaraj, M. K., & Tate, J. (2001). Electrical characterization of transparent p-i-n heterojunction diodes. Journal of Applied Physics, 90(11), 5763-5767. doi:10.1063/1.1413710
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  • 90
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  • 11
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  • This work was funded by the National Science Foundation under Contract No. DMR-0071727 and by the Research Corporation.
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