Interference phenomena due to a double bend in a quantum wire

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/xs55md255

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Attribute Name	Values
Creator	Wu, J. C. Wybourne, M. N. Yindeepol, W. Weisshaar, A. Goodnick, S. M.
Abstract	Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
Resource Type	Article
DOI	https://doi.org/10.1063/1.105558
Fecha Disponible	2010-02-11T00:14:15+00:00
Fecha de Emisión	1991-07-01
Citation	Wu, J. C., Wybourne, M. N., Yindeepol, W., Weisshaar, A., & Goodnick, S. M. (1991). Interference phenomena due to a double bend in a quantum wire [Electronic version]. Applied Physics Letters, 59(1), 102-104.
Journal Title	Applied Physics Letters
Journal Volume	59
Declaración de derechos	Copyright Not Evaluated
Publisher	American Institute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14330

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