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  • We computed band gaps of amorphous oxides within the In-Ga-Zn triad. These included ZnO, Ga2O3, In2O3, Ga2ZnO4, Ga2Zn8O11, In2ZnO4, InGaZnO4, and InGaO3. Comparing the computed band gap to experimental measurements, the results were promising with a mean unsigned error of 0.28 eV and an unsigned standard deviation of 0.28 eV. With this method in hand we then created and predicted the band gap for 250 stoiciometries within the In-Ga-Zn-O traid. A trend can be seen from the data, In composition has the greatest effect on band gap, Ga a slight effect, and Zn has little to none.
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  • description.provenance : Made available in DSpace on 2015-05-29T18:07:46Z (GMT). No. of bitstreams: 2license_rdf: 1089 bytes, checksum: 0a703d871bf062c5fdc7850b1496693b (MD5)placeholder.txt: 224 bytes, checksum: bf2bb61d78831061bb1258faf048e778 (MD5)
  • description.provenance : Approved for entry into archive by Amanda Whitmire(amanda.whitmire@oregonstate.edu) on 2015-05-29T18:07:46Z (GMT) No. of bitstreams: 2license_rdf: 1089 bytes, checksum: 0a703d871bf062c5fdc7850b1496693b (MD5)placeholder.txt: 224 bytes, checksum: bf2bb61d78831061bb1258faf048e778 (MD5)
  • description.provenance : Submitted by Amanda Whitmire (amanda.whitmire@oregonstate.edu) on 2015-05-29T18:07:18ZNo. of bitstreams: 2license_rdf: 1089 bytes, checksum: 0a703d871bf062c5fdc7850b1496693b (MD5)placeholder.txt: 224 bytes, checksum: bf2bb61d78831061bb1258faf048e778 (MD5)

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