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Bipolar resistive switching in an amorphous zinc tin oxide memristive device

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Abstract
  • The integration of amorphous zinc tin oxide (ZTO) into crossbar memristor device structures has been investigated where asymmetric devices were fabricated with Al (top) and Pt (bottom) electrodes. The authors found that these devices had reproducible bipolar resistive switching with high switching ratios >10(4) and long retention times of >10(4) s. Electrical characterization of the devices suggests that both filamentary and interfacial mechanisms are important for device switching. The authors have used secondary ion mass spectrometry to characterize the devices and found that significant interfacial reactions occur at the Al/ZTO interface. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4767124]
  • Keywords: Thin film transistors, Random access memory, Semiconductors, Mechanisms
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  • Rajachidambaram, J. S., Murali, S., Conley, J. F., Golledge, S. L., & Herman, G. S. (2013). Bipolar resistive switching in an amorphous zinc tin oxide memristive device. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31(1), 1. doi: 10.1116/1.4767124
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  • 31
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  • 1
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  • The project was funded by the Oregon Nanoscience and Microtechnologies Institute and the Office of Naval Research under Contract No.200CAR262. Partial support for J.F.C. was also provided through the National Science Foundation through DMR-0805372.
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