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p-type conductivity in CuCr₁₋ₓMgₓO₂ films and powders Public Deposited

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  • CuCr₁₋ₓMgₓO₂, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO₂ is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm⁻¹ in CuCr₀.₉₅Mg₀.₀₅O₂, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm⁻¹. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.
  • This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics and can be found at: http://scitation.aip.org/content/aip/journal/jap. Article Copyright (2001) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
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  • Nagarajan, R., Draeseke, A. D., Sleight, A. W., & Tate, J. (2001). p-type conductivity in CuCr₁₋ₓMgₓO₂ films and powders. Journal of Applied Physics, 89(12), 8022-8025.
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  • 89
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  • 12
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  • This work was supported by the National Science Foundation and by the Research Corporation.
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