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  • The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO₃–0.2Bi(Zn₁/₂Ti₁/₂) O₃ were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti³⁺-related defect center, which is correlated with lower resistivities and an electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium vacancy-oxygen vacancy pair Vbₐ - Vₒ, acted as an electron-trapping site. This defect was responsible for a significant change in the transport behavior with a high resistivity and an electrically homogeneous microstructure.
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  • description.provenance : Made available in DSpace on 2012-11-14T01:13:12Z (GMT). No. of bitstreams: 2CannDavidMIMEDefectMechanismsHighCorrection.pdf: 26802 bytes, checksum: 711a3f3cbbddbb6d3637bcb8ffc880c6 (MD5)CannDavidMIMEDefectMechanismsHigh.pdf: 603224 bytes, checksum: d301cecbc5f6f00e46e8d3018c2be8ee (MD5) Previous issue date: 2012-09-10
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