Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Public Deposited

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  • Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor depositionElectrical performance of monolayer MoS₂ field-effect transistors prepared by chemical vapor deposition
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  • Molybdenum disulfide (MoS₂) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm²/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm²/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10⁵ to 10⁹. (C) 2013 AIP Publishing LLC.
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  • Amani, M., Chin, M., Birdwell, A., O'Regan, T., Najmaei, S., Liu, Z., . . . Dubey, M. (2013). Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Applied Physics Letters, 102(19) doi:10.1063/1.4804546
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  • description.provenance : Approved for entry into archive by Deborah Campbell(deborah.campbell@oregonstate.edu) on 2013-09-16T15:29:37Z (GMT) No. of bitstreams: 1 AmaniMatinElectricalEngineeringComputerScienceElectricalPerformanceMonolayer.pdf: 1594071 bytes, checksum: cc0dfe908d48a59d6380781a679524d5 (MD5)
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  • description.provenance : Submitted by Deborah Campbell (deborah.campbell@oregonstate.edu) on 2013-09-16T15:28:31Z No. of bitstreams: 1 AmaniMatinElectricalEngineeringComputerScienceElectricalPerformanceMonolayer.pdf: 1594071 bytes, checksum: cc0dfe908d48a59d6380781a679524d5 (MD5)

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