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Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

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https://ir.library.oregonstate.edu/concern/articles/b2773w886

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Abstract
  • Molybdenum disulfide (MoS₂) field effect transistors (FET) were fabricated on atomically smooth large-area single layers grown by chemical vapor deposition. The layer qualities and physical properties were characterized using high-resolution Raman and photoluminescence spectroscopy, scanning electron microscopy, and atomic force microscopy. Electronic performance of the FET devices was measured using field effect mobility measurements as a function of temperature. The back-gated devices had mobilities of 6.0 cm²/V s at 300 K without a high-k dielectric overcoat and increased to 16.1 cm²/V s with a high-k dielectric overcoat. In addition the devices show on/off ratios ranging from 10⁵ to 10⁹. (C) 2013 AIP Publishing LLC.
  • This is the publisher’s final pdf. The published article is copyrighted by AIP Publishing LLC and can be found at: http://journals.aip.org/.
  • Keywords: Atomic layers, Mobility
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  • Amani, M., Chin, M., Birdwell, A., O'Regan, T., Najmaei, S., Liu, Z., . . . Dubey, M. (2013). Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Applied Physics Letters, 102(19) doi:10.1063/1.4804546
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  • 102
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  • 19
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  • The authors would also like to thank Dr. Pani Varanasi, ARO for his in-depth technical discussion on 2D atomic layer R&D. P.M.A., J.L., S.N, and Z.L. also acknowledge funding support from the ARO MURI program on 2D materials.
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