High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition Public Deposited

http://ir.library.oregonstate.edu/concern/defaults/cc08hm066

Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyrighted by American Institute of Physics ( http://www.aip.org/).

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  • High electron mobility thin films of In₂₋ₓWₓO₃₊y(0≤x≤0.075) were prepared on amorphous SiO₂ and single-crystal yttria-stablized zirconia (001) substrates by pulsed laser deposition. Mobilities ranged between 66 and 112 cm² /Vs depending on the substrate type and deposition conditions, and the highest mobility was observed at a W-dopant concentration of x~0.03. A small band gap shift was detected from films with increasing electron carrier density; the electron effective mass calculated from Burstein-Moss theory was 0.3mₑ. In₂₋ₓWₓO₃₊y films have high visible transmittance of ~80%.
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  • Newhouse, P. F., park, C., Keszler, D. A., Tate, J., & Nyholm, P. S. (2005). High electron mobility W-doped In₂O₃ thin films by pulsed laser deposition [Electronic version]. Applied Physics Letters, 87(11).
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