Mechanical stability of ultrathin Ge/Si film on SiO2: The effect of Si/SiO2 interface Public Deposited

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  • We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO₂, using imperfect interface elements between Si and SiO₂ to model Si/SiO₂ interfacial slippage. We demonstrate that the overall composite film is stable when only the tangential slippage is allowed, however, it becomes unstable when normal slippage is allowed: the coherently strained Ge island induces a large local bending of Si layer, and separates the Si layer from the underlying SiO₂ forming a void at the Si/SiO₂ interface.
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  • Huang, M., Nairn, J. A., Liu, F., & Lagally, M. G. (2005). Mechanical stability of ultrathin Ge∕Si film on SiO₂: The effect of Si∕SiO₂ interface. Journal of Applied Physics, 97(11), 116108-116112.
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  • description.provenance : Submitted by Deanne Bruner (deanne.bruner@oregonstate.edu) on 2013-08-21T23:25:12Z No. of bitstreams: 1 NairnJohnForestryMechanicalStabilityUltrathin.pdf: 145151 bytes, checksum: 879f3b85dedca0d184036917da1dcd56 (MD5)
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