Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices Public Deposited

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Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyrighted by American Institute of Physics ( http://www.aip.org/).

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  • The internal charge versus phosphor field (Q-Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q-Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may be readily educed from a Q-Fp plot.
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  • Abu-Dayah, A., Kobayashi, S., & Wager, J. F. (1993). Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices [Electronic version]. Applied Physics Letters, 62(7), 744-746.
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  • description.provenance : Approved for entry into archive by Linda Kathman(linda.kathman@oregonstate.edu) on 2010-01-27T22:30:12Z (GMT) No. of bitstreams: 1 ApplPhysLett_62_744.pdf: 358769 bytes, checksum: a2f4266709a4f44de2db3d92ee2e236b (MD5)
  • description.provenance : Made available in DSpace on 2010-01-27T22:30:12Z (GMT). No. of bitstreams: 1 ApplPhysLett_62_744.pdf: 358769 bytes, checksum: a2f4266709a4f44de2db3d92ee2e236b (MD5) Previous issue date: 1993-02-15
  • description.provenance : Submitted by David Moynihan (dmscanner@gmail.com) on 2010-01-27T21:40:53Z No. of bitstreams: 1 ApplPhysLett_62_744.pdf: 358769 bytes, checksum: a2f4266709a4f44de2db3d92ee2e236b (MD5)

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