Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices Public Deposited

http://ir.library.oregonstate.edu/concern/defaults/ht24wk68k

Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyrighted by American Institute of Physics ( http://www.aip.org/).

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  • Offset is observed in the charge–voltage (Q–V) or internal charge–phosphor field (Q–Fp) characteristics of certain alternating-current thin-film electroluminescent (ACTFEL) devices. This offset arises from a displacement along the voltage axis of a transient curve measured across a sense capacitor in the electrical characterization setup. A procedure for adjusting this offset is proposed that allows ACTFEL devices manifesting offset to be meaningfully analyzed. Two possible sources of offset are deduced from simulation and are associated with an asymmetry in the interface state energy depths at the two phosphor–insulator interfaces or with an asymmetry in the location of space charge generation in the phosphor.
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  • Shih, S., Keir, P. D., Hitt, J., & Wager, J. F. (1996). Offset of the electrical characteristics of alternating-current thin-film electroluminescent devices [Electronic version]. Applied Physics Letters, 69(13), 1921-1923.
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