High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer Public Deposited

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Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyrighted by American Institute of Physics ( http://www.aip.org/).

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  • Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and −5–5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10⁷ is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n−1)d¹⁰ ns⁰ (n ≥4) electronic configurations.
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  • Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., & Keszler, D. A. (2004). High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [Electronic version]. Applied Physics Letters, 86(1).
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