High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/p5547s56x

Descriptions

Attribute Name	Values
Creator	Chiang, H. Q. Wager, J. F. Hoffman, R. L. Jeong, J. Keszler, Douglas A.
Abstract	Transparent thin-film transistors (TTFTs) with an amorphous zinc tin oxide channel layer formed via rf magnetron sputter deposition are demonstrated. Field-effect mobilities of 5–15 and 20–50 cm² V‾¹ s‾¹ are obtained for devices post-deposition annealed at 300 and 600 °C, respectively. TTFTs processed at 300 and 600 °C yield devices with turn-on voltage of 0–15 and −5–5 V, respectively. Under both processing conditions, a drain current on-to-off ratio greater than 10⁷ is obtained. Zinc tin oxide is one example of a new class of high performance TTFT channel materials involving amorphous oxides composed of heavy-metal cations with (n−1)d¹⁰ ns⁰ (n ≥4) electronic configurations.
Resource Type	Article
DOI	https://doi.org/10.1063/1.1843286
Date Available	2010-01-27T22:33:54+00:00
Date Issued	2004-12-23
Citation	Chiang, H. Q., Wager, J. F., Hoffman, R. L., Jeong, J., & Keszler, D. A. (2004). High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [Electronic version]. Applied Physics Letters, 86(1).
Journal Title	Applied Physics Letters
Journal Volume	86
权利声明	Copyright Not Evaluated
Publisher	American Institute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14132