CannDavidMIMEDefectMechanismsHighCorrection.pdf

Public Deposited

Citeable URL: https://ir.library.oregonstate.edu/concern/defaults/rv042z46s

Descriptions

Attribute Name	Values
Creator	Raengthon, Natthaphon DeRose, Victoria J. Brennecka, Geoffrey L. Cann, David P.
Abstract	The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO₃–0.2Bi(Zn₁/₂Ti₁/₂) O₃ were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti³⁺-related defect center, which is correlated with lower resistivities and an electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium vacancy-oxygen vacancy pair Vbₐ - Vₒ, acted as an electron-trapping site. This defect was responsible for a significant change in the transport behavior with a high resistivity and an electrically homogeneous microstructure.
Déclaration de droits	Copyright Not Evaluated
Related Items	The published article can be found at Applied Physics Letters.

Parents:

La vignette	Titre	Date de téléchargement	Visibilité	actes
	CannDavidMIMEDefectMechanismsHighCorrection.pdf	2017-10-26	Public	Télécharger