Other Scholarly Content

 

Structure of the InP/SiO₂ interface Public Deposited

Downloadable Content

Download PDF
https://ir.library.oregonstate.edu/concern/defaults/sn009z993

Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyrighted by American Institute of Physics ( http://www.aip.org/).

Descriptions

Attribute NameValues
Creator
Abstract
  • InP/SiO₂ interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 Å peak to peak depending on the InP surface treatment prior to SiO₂ desposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 °C is shown to consist of two separate layers, an inner one of 30–70 Å thickness and probably composition InPO₄, and an outer one of 60-Å thickness and probably composition In₂O₃.
Resource Type
DOI
Date Available
Date Issued
Citation
  • Liliental, Z., Krivanek, O. L., Wager, J. F., & Goodnick, S. M. (1985). Structure of the InP/SiO₂ interface [Electronic version]. Applied Physics Letters, 46(9), 889-891.
Series
Rights Statement
Publisher
Language
Replaces
Additional Information
  • description.provenance : Approved for entry into archive by Linda Kathman(linda.kathman@oregonstate.edu) on 2010-02-01T15:11:44Z (GMT) No. of bitstreams: 1ApplPhysLett_46_889.pdf: 561646 bytes, checksum: 3d7e20f3361acdd5c536aba548b8b2c7 (MD5)
  • description.provenance : Made available in DSpace on 2010-02-01T15:11:44Z (GMT). No. of bitstreams: 1ApplPhysLett_46_889.pdf: 561646 bytes, checksum: 3d7e20f3361acdd5c536aba548b8b2c7 (MD5) Previous issue date: 1995-03-01
  • description.provenance : Submitted by David Moynihan (dmscanner@gmail.com) on 2010-01-29T19:18:01ZNo. of bitstreams: 1ApplPhysLett_46_889.pdf: 561646 bytes, checksum: 3d7e20f3361acdd5c536aba548b8b2c7 (MD5)

Relationships

Parents:

This work has no parents.

Items