Band alignment at the BaCuSeF/ZnTe interface Public Deposited

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This is the publisher’s final pdf. The published article is copyrighted by the American Institute of Physics and can be found at:  http://scitation.aip.org/content/aip/journal/apl. Article Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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  • In situ photoemission spectroscopy experiments are used to characterize the interface between ZnTe and the wide band gap p-type semiconductor BaCuSeF. The contact is characterized by a null valence-band offset, a large conduction-band offset, and a chemically graded interface. By applying the transitivity rule for band offset and on the basis of similarities in chemical composition, BaCuSeF contact to chalcogenide photovoltaic absorber materials would be expected to have similar properties. By extension, BaCuChF (Ch=S,Se,Te) materials are suitable as p-layers in p-i-n double-heterojunction solar cells fabricated with CdTe, Cu(InGa)Se₂, and Cu₂ZnSnS₄ absorbers.
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  • Zakutayev, A., Tate, J., Platt, H. A. S,, Keszler, D. A., Barati, A., Klein, A., & Jaegermann, W. (2010). Band alignment at the BaCuSeF/ZnTe interface. Applied Physics Letters, 96(16). doi:10.1063/1.3405757
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  • description.provenance : Made available in DSpace on 2013-10-28T23:56:08Z (GMT). No. of bitstreams: 1 TateJanetPhysicsBandAlignmentBaCuSeF.pdf: 120573 bytes, checksum: c7853b90917af51f0f656e6c39e938a7 (MD5) Previous issue date: 2010-04-19
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