Interference phenomena due to a double bend in a quantum wire Public Deposited

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Article appears in Applied Physics Letters ( http://apl.aip.org/) and is copyright by American Institute of Physics ( http://www.aip.org/).

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  • Narrow channel devices were fabricated using a split-gate high electron mobility transistor structure in which electrons are forced through a double-bend discontinuity. The low-temperature conductance shows a number of peaks in the lowest quantized conductance plateau which correspond qualitatively to resonance effects that are predicted for the geometrical discontinuities of the double bend.
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  • Wu, J. C., Wybourne, M. N., Yindeepol, W., Weisshaar, A., & Goodnick, S. M. (1991). Interference phenomena due to a double bend in a quantum wire [Electronic version]. Applied Physics Letters, 59(1), 102-104.
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  • description.provenance : Approved for entry into archive by Linda Kathman(linda.kathman@oregonstate.edu) on 2010-02-11T00:14:15Z (GMT) No. of bitstreams: 1 Weisshaar.InterferencePhenomena.pdf: 465204 bytes, checksum: d6cedf38a131a5d2ab1a240a35bb7752 (MD5)
  • description.provenance : Submitted by David Moynihan (dmscanner@gmail.com) on 2010-02-10T21:22:45Z No. of bitstreams: 1 Weisshaar.InterferencePhenomena.pdf: 465204 bytes, checksum: d6cedf38a131a5d2ab1a240a35bb7752 (MD5)
  • description.provenance : Made available in DSpace on 2010-02-11T00:14:15Z (GMT). No. of bitstreams: 1 Weisshaar.InterferencePhenomena.pdf: 465204 bytes, checksum: d6cedf38a131a5d2ab1a240a35bb7752 (MD5) Previous issue date: 1991-07-01

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