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Defect mechanisms in high resistivity BaTiO₃–Bi(Zn₁/₂Ti₁/₂)O₃ ceramics Public Deposited

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  • Defect mechanisms in high resistivity BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics
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  • The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO₃–0.2Bi(Zn₁/₂Ti₁/₂) O₃ were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti³⁺-related defect center, which is correlated with lower resistivities and an electrically heterogeneous microstructure. In compositions with 2 mol. % Ba-deficiency, a barium vacancy-oxygen vacancy pair Vbₐ - Vₒ, acted as an electron-trapping site. This defect was responsible for a significant change in the transport behavior with a high resistivity and an electrically homogeneous microstructure.
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  • Raengthon, N., DeRose, V., Brennecka, G., & Cann, D. (2012). Defect mechanisms in high resistivity BaTiO3-bi(Zn1/2Ti1/2)O-3 ceramics (vol 101, 112904, 2012). APPLIED PHYSICS LETTERS, 101(11) doi: 10.1063/1.4752452
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  • The authors would like to acknowledge NSF CHE-0840478 for funding the EPR spectroscopy at CAMCOR atthe University of Oregon. A portion of this work was supportedby the Energy Storage Program managed by Dr. Imre Gyuk of the Department of Energy’s Office of ElectricityDelivery and Energy Reliability. Sandia National Laboratoriesis a multi-program laboratory managed and operated bySandia Corporation, a wholly owned subsidiary of LockheedMartin Corporation, for the U.S. Department of Energy’sNational Nuclear Security Administration under contractDE-AC04-94AL85000.
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  • description.provenance : Made available in DSpace on 2012-11-14T01:13:12Z (GMT). No. of bitstreams: 2CannDavidMIMEDefectMechanismsHighCorrection.pdf: 26802 bytes, checksum: 711a3f3cbbddbb6d3637bcb8ffc880c6 (MD5)CannDavidMIMEDefectMechanismsHigh.pdf: 603224 bytes, checksum: d301cecbc5f6f00e46e8d3018c2be8ee (MD5) Previous issue date: 2012-09-10
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