Radiation effects in III-V heterojunction bipolar transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/0c483n053

Descriptions

Attribute NameValues
Creator
Abstract or Summary
  • Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The devices were subjected to electron and neutron irradiation and were electrically characterized before and after irradiation. Under electron irradiation these devices were quite robust up to a fluence of 6.69x 10^15 e/cm^2. However, a more careful analysis showed a slight gain improvement at a low base current and a small gain degradation at higher base currents. The gain increase at small base currents and low fluence is believed to be caused by the ionization damage in the polyimide passivation layer. The gain degradation at higher fluence and high base currents is due to the displacement damage in the emitter-base junction region. In the case of neutron irradiation the major effects were (1) the decrease of collector current or equivalently the common-emitter DC current gain reduction and (2) the collector-emitter offset voltage shift. At low fluence of neutron irradiation, a small gain increase is observed at low base currents which is caused by the suppression of the base current due to ionization effect. At higher fluence, gain degradation is observed whose magnitude depends upon the nature and fluence of the irradiation particle. This degradation is caused by the displacement damage in the SCR leading to the current gain degradation at all base currents. In addition to the gain degradation, neutron irradiation causes a shift of the collector-emitter offset voltage, which is caused by the displacement damage in the base-collector region.
Resource Type
Date Available
Date Copyright
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
Rights Statement
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi (Monochrome, 8-bit Grayscale) using ScandAll PRO 1.8.1 on a Fi-6670 in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces
Additional Information
  • description.provenance : Approved for entry into archive by Deborah Campbell(deborah.campbell@oregonstate.edu) on 2011-08-08T20:29:53Z (GMT) No. of bitstreams: 1 VuppalaSoujanya2005.pdf: 3035281 bytes, checksum: 98d8bcfd807857730d2f1b8f51dc741d (MD5)
  • description.provenance : Submitted by Tamera Ontko (toscannerosu@gmail.com) on 2011-08-03T21:01:41Z No. of bitstreams: 1 VuppalaSoujanya2005.pdf: 3035281 bytes, checksum: 98d8bcfd807857730d2f1b8f51dc741d (MD5)
  • description.provenance : Approved for entry into archive by Deborah Campbell(deborah.campbell@oregonstate.edu) on 2011-08-08T20:33:46Z (GMT) No. of bitstreams: 1 VuppalaSoujanya2005.pdf: 3035281 bytes, checksum: 98d8bcfd807857730d2f1b8f51dc741d (MD5)
  • description.provenance : Made available in DSpace on 2011-08-08T20:33:46Z (GMT). No. of bitstreams: 1 VuppalaSoujanya2005.pdf: 3035281 bytes, checksum: 98d8bcfd807857730d2f1b8f51dc741d (MD5) Previous issue date: 2004-11-24

Relationships

Parents:

This work has no parents.

Last modified

Downloadable Content

Download PDF

Items