Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/1831cn61k

Descriptions

Attribute NameValues
Creator
Abstract or Summary
  • Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back channel are sensitive to surface chemistries and can be tailored using SAMs. Chemistry at the back channel interface alters device performance. The back channel surface sensitivities can be used in applications for chemical sensing TFTs. IGZO TFTs with and without octadecyl phosphonic acid applied to the back channel with varied channel thicknesses (10-50 nm) were examined. TFT parameters, such as, turn-on voltage, hysteresis, mobility, subthreshold swing, and current on/off ratio were evaluated by current-voltage electrical measurements. The use of electrohydrodynamic ink jet (EHDP) printing as non-contact method for patterning etch resists with sub-10 μm features was demonstrated for fabrication of IGZO TFTs. EHDP uses an electric field to generate ink droplets that can be smaller than the nozzle diameter. EHDP was used for depositing a self-assembled monolayer, n-hexyl phosphonic acid (HPA), and photoresist, SU8, as etch resists for patterning the IGZO TFT channel. Drop on demand printing is accomplished by overlapping of discrete droplets to form the desired feature. The optimal ink formulations and EHDP parameters were determined for each ink. Parameters were optimized for producing the smallest, uniform printed features. Bottom gate IGZO TFTs were fabricated by plasma sputtering IGZO onto a SiO₂/Si substrate. The IGZO TFT channels were patterned by printing HPA or SU8 ink as the etch resist, and using HCl as the etch solution. Indium tin oxide source and drain were deposited over the patterned channel using plasma sputtering. The electrical performance of IGZO TFTs patterned using HPA and SU8 were compared and evaluated using I-V electrical measurements. Drop on demand printing offers a high-speed, low cost route to TFT fabrication and manufacturing. The long narrow channels produced have applications for TFT sensor technologies. EHDP was shown to be capable of printing etch resists for the patterning and fabrication of IGZO TFTs on the scales relevant for digital displays.
Resource Type
Date Available
Date Copyright
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Academic Affiliation
Non-Academic Affiliation
Keyword
Subject
Rights Statement
Peer Reviewed
Language
Replaces
Additional Information
  • description.provenance : Submitted by Joshua Motley (motleyj@oregonstate.edu) on 2016-06-26T21:16:46Z No. of bitstreams: 1 MotleyJoshuaR2016.pdf: 2089397 bytes, checksum: 521b114badd31d9ac33aaa4c77aa6fea (MD5)
  • description.provenance : Approved for entry into archive by Julie Kurtz(julie.kurtz@oregonstate.edu) on 2016-06-27T16:21:08Z (GMT) No. of bitstreams: 1 MotleyJoshuaR2016.pdf: 2089397 bytes, checksum: 521b114badd31d9ac33aaa4c77aa6fea (MD5)
  • description.provenance : Approved for entry into archive by Laura Wilson(laura.wilson@oregonstate.edu) on 2016-06-27T17:55:14Z (GMT) No. of bitstreams: 1 MotleyJoshuaR2016.pdf: 2089397 bytes, checksum: 521b114badd31d9ac33aaa4c77aa6fea (MD5)
  • description.provenance : Submitted by Joshua Motley (motleyj@oregonstate.edu) on 2016-06-15T01:18:01Z No. of bitstreams: 1 MotleyJoshuaR2016.pdf: 2133552 bytes, checksum: 479e0dd48a78cef7ee9dd5025dee6d0d (MD5)
  • description.provenance : Rejected by Julie Kurtz(julie.kurtz@oregonstate.edu), reason: Rejecting to change the commencement date on the bottom of the title page to read - Commencement June 2017, since your thesis was uploaded after the 2016 date. Also on the Abstract page after Master of Science remove the word "Degree" Everything else looks good. Once revised, log back into ScholarsArchive and go to the upload page. Replace the attached file with the revised PDF and resubmit. Thanks, Julie on 2016-06-23T18:57:09Z (GMT)
  • description.provenance : Made available in DSpace on 2016-06-27T17:55:14Z (GMT). No. of bitstreams: 1 MotleyJoshuaR2016.pdf: 2089397 bytes, checksum: 521b114badd31d9ac33aaa4c77aa6fea (MD5) Previous issue date: 2016-05-27

Relationships

Parents:

This work has no parents.

Last modified

Downloadable Content

Download PDF

Items