A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/1831cp45d

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  • The bandgap voltage reference technique, as implemented in Silicon technology, has evolved to a state of advanced development and become the method of choice for temperature independent voltage biasing in integrated circuits. The heterojunction bipolar transistor (HBT), fabricated from epitaxial A1GaAs /GaAs, is developing to a point where basic circuit implementations are possible. This project extends the bandgap reference concept, as developed for Silicon bipolar junction transistor, to HBTs. The I [subscript C] - V [subscript BE] characteristics of sample HBTs are measured over a temperature range of 220K to 360K, and model parameters are determined from curve-fitting. Due to device nonidealities, such as high series resistance and low current gain, poor performance is expected from bandgap voltage reference sources made with HBTs.
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