Graduate Thesis Or Dissertation

 

Study on p-n junction gallium arsenide avalanche photodiodes Public Deposited

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  • The study on a p-n junction gallium arsenide avalanche photodiode is reported. The procedures of the fabrication of the diodes and the measurement of the device performance in terms of photomultiplication factors are described. The photodiode is mesa type with an active diameter of 60 microns, and the junction depth of 0.7 microns. The device exhibits a breakdown voltage of 28 volts and a leakage current of 25 nA at breakdown. When using tungsten and He-Ne laser light sources at various intensities, the photomultiplication factors range from 12.3 to 14.8.
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  • File scanned at 300 ppi (Monochrome) using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 5.0 was used for pdf compression and textual OCR.
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  • description.provenance : Made available in DSpace on 2014-01-29T18:13:07Z (GMT). No. of bitstreams: 1 NakagawaTakemi1973.pdf: 371684 bytes, checksum: 8c0d785fc71326b6bc7871ffa8f4e06a (MD5) Previous issue date: 1973-03-13
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  • description.provenance : Approved for entry into archive by Katy Davis(kdscannerosu@gmail.com) on 2014-01-29T18:13:06Z (GMT) No. of bitstreams: 1 NakagawaTakemi1973.pdf: 371684 bytes, checksum: 8c0d785fc71326b6bc7871ffa8f4e06a (MD5)
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-01-10T17:55:02Z (GMT) No. of bitstreams: 1 NakagawaTakemi1973.pdf: 371684 bytes, checksum: 8c0d785fc71326b6bc7871ffa8f4e06a (MD5)

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