A thermoelectric study of doped liquid thallium-tellurium alloys Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/1n79h764w

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  • Electrical resistivity and thermoelectric power measurements have been made over the temperature range of 450° to 600°C on n-type liquid thalliurn-tellurium solutions. Liquids with compositions from 61.5 to 72.0 atomic percent thallium were studied. In addition, alloys of some of the three component thallium-teIlurium solutions containing small amounts of silver, cadmium, indium, tin (n-type doping impurities), or antimony (p-type doping impurity) were studied. The results suggest that each added atom of these doping elements contributes some fractional number of a donor (or acceptor) level. In addition, some measurements were made in a fused silica cell at temperatures up to 875°C. The data are analyzed using a conventional solid state transport theory, This analysis yields the relative concentration and electron mobility as a function of composition. P-n transitions in the Seebeck coefficient at high temperature for some near intrinsic thallium-tellurium solutions show that the electron mobility is larger than the hole mobility at high temperatures. Other results included estimates of the activation energies for holes in n-type solutions at two compositions, and the electrical determination of a liquidus in part of the phase diagrarn of the thallium-telluriurn binary system.
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  • description.provenance : Approved for entry into archive by Katy Davis(kdscannerosu@gmail.com) on 2014-04-28T16:52:01Z (GMT) No. of bitstreams: 1 FieldMarshall1967.pdf: 1922099 bytes, checksum: 7774e35c132863d547f0cc962fc1dfc8 (MD5)
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