Microwave methods of measuring resistivity of gallium arsenide Public Deposited

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  • This paper is concerned with the determination of gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted through a slice. The first section of this paper describes gallium arsenide properties as compared to silicon, germanium, silicon carbide, and diamond. A description is then given of the method used by industry to determine the resistivity of gallium arsenide by the conventional four-point probe method. Various methods of resistivity measurement are discussed in the second section before taking up microwave methods in the third section. A discussion of the various microwave methods of resistivity evaluation then follows. It is found that it is feasible to measure the resistivity of "N" and "P" type gallium arsenide, of both the single and polycrystalline varieties, by the method of microwave transmission through a slice of semiconductor inserted transversally in a waveguide. The results of this investigation show that resistivity evaluation by the microwave method used should be accurate to within plus or minus five percent. With due consideration given to accuracy of observations and quality of instrumentation, the results of resistivity measurement by microwave means should fall within the five percent accuracy usually attributed to the conventional four-point probe method. By utilizing one of the microwave methods discussed in this paper it should be possible to cover the range of resistivities encountered in gallium arsenide crystal manufacture.
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