Metal-to-gallium arsenide contact evaluation using a VHF bridge technique Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/2514np021

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  • In this paper, the theory of metal-semiconductor contacts was applied to metal contacts on gallium arsenide. A model was discussed which proposed that the contact resistance was due to a highly resistive region between the metal and the semiconductor. In order to evaluate this resistance, a technique using a VHF bridge was developed. In principle, the contact resistance will be shunted at high frequencies due to the capacitances of the resistive region. A comparison was then made of several different methods of making contact to P-type gallium arsenide. The methods investigated were representative of the methods which are contained in the current literature. The results were statistically analyzed and indicated that alloyed contacts are generally superior to plated contacts. A zinc contact on an etched surface formed the best alloyed contact and a silver contact on a lapped surface formed the best plated contact. Experimental evidence was found to support the proposed model for the contact resistance.
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