A comparison of substrate noise coupling in lightly and heavily doped CMOS processes for 2.4 GHz LNA's Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/2801pj995

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  • Three types of low noise amplifiers operating at 2.4GHz were designed. They are the commonly used single-ended and differential amplifiers as well as a new quasi-differential amplifier. The substrate noise injected into these amplifiers is examined for both heavily and lightly doped CMOS substrates. For the single-ended amplifier the noise is modeled in SPICE with good correlation between measurements and simulations. Using these models and simulations the major noise coupling mechanisms are identified. In both types of substrates, harmonics of the clock couple into the bond pads and the inductor at the LNA output. Intermodulation products of the clock and the RF carrier are produced by noise coupling directly into the input transistor in the heavily doped substrate or into the gate interconnect in the lightly doped substrate. Methods of noise mitigation are identified and simulated for each substrate. In the differential amplifier harmonic noise is dominated by unequal coupling into passive circuitry. Intermodulation noise in the differential amplifier arises from coupling of substrate noise into the active devices. Even though the substrate noise is common mode, it is shown that the intermodulation noise is not reduced in a differential amplifier circuit. The performance of the quasi-differential amplifier is comparable to the differential amplifier in the lightly doped substrate. However, in the heavily doped substrate the intermodulation noise is much larger with the quasi-differential amplifier.
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