Graduate Thesis Or Dissertation

 

A complementary MOS random-access-memory cell wth double-diffused MOS transistors Public Deposited

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https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/3r074x86f

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  • The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed. The CMOS RAM cell operating characteristics were studied as related to the characteristics of devices in the cell. Both hybrid and monolithic CMOS RAM cells with DN-MOS transistors were realized. The theoretical predictions of cell switching characteristics are experimentally justified. The advantage of using DN-MOS transistors in a CMOS RAM cell is found to be that a faster switching cell can be built using the same area of silicon as compared to a regular complementary structure.
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  • description.provenance : Submitted by Georgeann Booth (gbscannerosu@gmail.com) on 2013-12-10T23:31:11Z No. of bitstreams: 1 TaoDavid1973.pdf: 3018674 bytes, checksum: 495e43fc2fbaf94731938b4ab9023a71 (MD5)
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  • description.provenance : Made available in DSpace on 2013-12-31T19:40:47Z (GMT). No. of bitstreams: 1 TaoDavid1973.pdf: 3018674 bytes, checksum: 495e43fc2fbaf94731938b4ab9023a71 (MD5) Previous issue date: 1972-11-08
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2013-12-11T16:13:45Z (GMT) No. of bitstreams: 1 TaoDavid1973.pdf: 3018674 bytes, checksum: 495e43fc2fbaf94731938b4ab9023a71 (MD5)

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